BFP840ESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 35 mA, 2.25 V, SMD, SOT-343, BFP840ESDH6327XTSA1
Unit Price (€ / pc.)
0.3332 € *
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Leadtime: On Request **
Bipolar transistor, BFP840ESDH6327XTSA1, Infineon Technologies
The BFP840ESDH6327XTSA1 is a high performance HBT (heterojunction bipolar transistor) specifically designed for 5-6 GHz Wi-Fi applications. The device is based on a reliable high volume SiGe:C technology.
Features
- High gain
- High ESD protection
- Low noise
- Pb-free and RoHs-compliant
Applications
- As low noise amplifier (LNA) in mobile, portable and fixed connectivity applications.
- Ideal for low voltage applications
- Ka-band oscillators
- Satellite communication systems navigation systems, satellite radio and C-band LNB
Technical specifications
| Max DC amplification | 450 mA | |
| Assembly | SMD | |
| Enclosure | SOT-343 | |
| max.voltage between collector and base Vcbo | 2.9 V | |
| Version | NPN | |
| min. operating temperature | -55 °C | |
| Transit frequency fTmin | 80 GHz | |
| Min DC gain | 150 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 2.25 V | |
| Collector current | 35 mA | |
| Power dissipation | 0.075 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |