BFP740FESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 45 mA, 4.2 V, SMD, TSFP-4, BFP740FESDH6327XTSA1
Unit Price (€ / pc.)
0.2130 € *
Standard delivery time from the manufacturer is: 12 Weeks
Bipolar transistor, BFP740FESDH6327XTSA1, Infineon Technologies
The BFP740FESDH6327XTSA1 is a very low noise wideband NPN bipolar RF transistor. The device is based on a reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology.
Features
- High RF input power
- High ESD protection
- Low noise
- Pb-free and RoHs-compliant
Applications
- As low noise amplifier (LNA) in mobile, portable and fixed connectivity applications.
- As discrete active mixer, amplifier in VCOs and buffer amplifier
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- Satellite communication systems navigation systems, satellite radio and C-band LNB
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Transit frequency fTmin | 47 GHz | |
| max. operating temperature | 150 °C | |
| Min DC gain | 160 mA | |
| Max DC amplification | 400 mA | |
| Assembly | SMD | |
| max.voltage between collector and emitter Vceo | 4.2 V | |
| min. operating temperature | -55 °C | |
| max.voltage between collector and base Vcbo | 4.9 V | |
| Power dissipation | 0.16 W | |
| Enclosure | TSFP-4 | |
| Collector current | 45 mA | |
| Version | NPN |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Reel with 3,000 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |