BFP740FESDH6327XTSA1 | Infineon Technologies

Bipolar junction transistor, NPN, 45 mA, 4.2 V, SMD, TSFP-4, BFP740FESDH6327XTSA1

Order No.: 88S7118
EAN: 4099879031778
MPN:
BFP740FESDH6327XTSA1
SP000890036
Series: BFP
BFP740FESDH6327XTSA1 Infineon Technologies Bipolar Transistors
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Unit Price (€ / pc.)
0.357 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
1,071.00 € *
*incl. VAT plus shipping costs
**Subject to prior sale
3000 pcs.
0.357 €

Bipolar transistor, BFP740FESDH6327XTSA1, Infineon Technologies

The BFP740FESDH6327XTSA1 is a very low noise wideband NPN bipolar RF transistor. The device is based on a reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology.

Features

  • High RF input power
  • High ESD protection
  • Low noise
  • Pb-free and RoHs-compliant

Applications

  • As low noise amplifier (LNA) in mobile, portable and fixed connectivity applications.
  • As discrete active mixer, amplifier in VCOs and buffer amplifier
  • Multimedia applications such as mobile/portable TV, CATV, FM Radio
  • Satellite communication systems navigation systems, satellite radio and C-band LNB
Technical specifications
Max DC amplification 400 mA
Assembly SMD
Enclosure TSFP-4
max.voltage between collector and base Vcbo 4.9 V
Version NPN
min. operating temperature -55 °C
Transit frequency fTmin 47 GHz
Min DC gain 160 mA
max. operating temperature 150 °C
max.voltage between collector and emitter Vceo 4.2 V
Collector current 45 mA
Power dissipation 0.16 W
Logistics
Customs tariff number 85412900
Original Packaging Reel with 3,000 pieces
Compliance
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform Yes