BFP720FH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 25 mA, 4 V, SMD, TSFP-4, BFP720FH6327XTSA1
Unit Price (€ / pc.)
0.3689 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP720FH6327XTSA1, Infineon Technologies
The BFP720FH6327XTSA1 is a wideband NPN RF heterojunction bipolar transistor (HBT).
Features
- High performance general purpose wideband LNA transistor
- Low collector-emitter breakdown voltage
- Low current gain
- Pb-free and RoHs-compliant
Applications
- FM radio
- Satellite radio
- Cordless phone
- Bluetooth
Technical specifications
| Max DC amplification | 400 mA | |
| Assembly | SMD | |
| Enclosure | TSFP-4 | |
| max.voltage between collector and base Vcbo | 13 V | |
| Version | NPN | |
| min. operating temperature | -55 °C | |
| Transit frequency fTmin | 45 GHz | |
| Min DC gain | 160 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 4 V | |
| Collector current | 25 mA | |
| Power dissipation | 0.1 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |