BFP193E6327 | Infineon Technologies

Bipolar junction transistor, NPN, 80 mA, 12 V, SMD, SOT-143, BFP193E6327

Order No.: 16S6896
EAN: 4099879028983
MPN:
BFP193E6327
Series: BFP193
BFP193E6327 Infineon Technologies Bipolar Transistors
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Unit Price (€ / pc.)
0.2225 € *
Standard delivery time from the manufacturer is: On Request
Total Price:
667.59 € *
*incl. VAT plus shipping costs
Subject to prior sale
3000 pcs.
0.2225 €

Bipolar transistor, BFP193E6327, Infineon Technologies

The BFP193E6327is a low noise silicon bipolar RF transistor that is used for high-gain amplifiers.

Features

  • Low current gain
  • Low collector-emitter breakdown voltage
  • Low noise
  • Pb-free and RoHs-compliant

Applications

  • For low noise, high-gain amplifiers up to 2 GHz
  • For linear broadband amplifiers
Technical specifications
Max DC amplification 140 mA
Assembly SMD
Enclosure SOT-143
max.voltage between collector and base Vcbo 20 V
Version NPN
min. operating temperature -55 °C
Transit frequency fTmin 6 GHz
Min DC gain 70 mA
max. operating temperature 150 °C
max.voltage between collector and emitter Vceo 12 V
Collector current 80 mA
Power dissipation 0.58 W
Logistics
Country of origin MY
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform No