BCW68H | Infineon Technologies
Bipolar junction transistor, PNP, 800 mA, 45 V, SMD, SOT-23, BCW68H
Unit Price (€ / pc.)
0.0940 € *
Standard delivery time from the manufacturer is: On Request
Bipolar transistor, BCW68H, Infineon Technologies
Features
- High collector current
- High current gain
- Low collector-emitter saturation voltage
- Pb-free and RoHs-compliant
Applications
- For AF driver and output stages
Technical specifications
| Max DC amplification | 630 mA | |
| Saturation voltage | 1 V | |
| Assembly | SMD | |
| Enclosure | SOT-23 | |
| Rated current | 1 A | |
| max.voltage between collector and base Vcbo | 60 V | |
| Version | PNP | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 200 MHz | |
| Min DC gain | 250 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 45 V | |
| Collector current | 800 mA | |
| Power dissipation | 0.33 W |
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Logistics
| Country of origin | MY |
| Customs tariff number | 85412900 |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |