BCR185E6327 | Infineon Technologies
Bipolar junction transistor, PNP, 100 mA, 50 V, SMD, SOT-23, BCR185E6327
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Bipolar transistor, BCR185E6327, Infineon Technologies
Features
- Built in bias resistor
- Low current gain
- High collector-emitter breakdown voltage
- Pb-free and RoHs-compliant
Applications
- Switching circuit
- Inverters
- Interface circuit
- Driver circuit
Technical specifications
| Version | PNP | |
| Enclosure | SOT-23 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 50 V | |
| max.voltage between collector and emitter Vceo | 50 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | 300 mV | |
| Transit frequency fTmin | 200 MHz | |
| Power dissipation | 0.2 W | |
| Collector current | 100 mA | |
| Min DC gain | 70 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Rolle mit 3.000 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |