BC850CE6327 | Infineon Technologies
Bipolar junction transistor, NPN, 100 mA, 45 V, SMD, SOT-23, BC850CE6327
Discontinued
Unit Price (€ / pc.)
0.1119 € *
Available: 1,797 pcs.
Leadtime: On Request **
Total Price:
0.11 € *
Price list
Quantity
Price per unit*
1 pcs.
0.1119 €
250 pcs.
0.0964 €
1250 pcs.
0.0833 €
3000 pcs.
0.0750 €
10000 pcs.
0.0678 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, BC850CE6327, Infineon Technologies
Features
- High current gain
- Low collector-emitter saturation voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For AF input stages and driver applications
Technical specifications
| Max DC amplification | 800 mA | |
| Saturation voltage | 250 mV | |
| Assembly | SMD | |
| Enclosure | SOT-23 | |
| Rated current | 100 mA | |
| max.voltage between collector and base Vcbo | 50 V | |
| Version | NPN | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 250 MHz | |
| Min DC gain | 420 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 45 V | |
| Collector current | 100 mA | |
| Power dissipation | 0.33 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |