BC848AE6327 | Infineon Technologies
Bipolar junction transistor, NPN, 100 mA, 45 V, SMD, SOT-23, BC848AE6327
Order No.: 12S6271
EAN: 4099879027269
MPN:
BC848AE6327
Discontinued
Unit Price (€ / pc.)
0.0904 € *
Available: 111 pcs.
Leadtime: On Request **
Total Price:
0.90 € *
Price list
Quantity
Price per unit*
10 pcs.
0.0904 €
100 pcs.
0.0619 €
500 pcs.
0.0464 €
1000 pcs.
0.0393 €
2500 pcs.
0.0309 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, BC848AE6327, Infineon Technologies
Features
- High current gain
- Low collector-emitter saturation voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For AF input stages and driver applications
Technical specifications
| Max DC amplification | 800 mA | |
| Assembly | SMD | |
| Enclosure | SOT-23 | |
| max.voltage between collector and base Vcbo | 50 V | |
| Version | NPN | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 250 MHz | |
| Min DC gain | 420 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 45 V | |
| Collector current | 100 mA |
Download
Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |