This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 120 mΩ | |
Gate Charge Qg @10V (nC) | 3.9x10<sup>-9</sup> C | |
Enclosure | TO-236 | |
max. Voltage | 30 V | |
Max. current | 2 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD |
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Reel with 3,000 pieces |
RoHS conform | Yes |
SVHC free | Yes |
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