ZXMN3A01FTA | Diodes
Diodes N channel MOSFET, 30 V, 2 A, TO-236, ZXMN3A01FTA
As a private customer, you can buy this item as soon as we have it back in stock.
MOSFET, ZXMN3A01FTA, Diodes
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low On-Resistance
- Fast switching speed
- Low threshold
- Low gate drive
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 120 mΩ | |
Gate Charge Qg @10V (nC) | 3.9x10<sup>-9</sup> C | |
Enclosure | TO-236 | |
max. Voltage | 30 V | |
Max. current | 2 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD |
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Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Reel with 3,000 pieces |
Compliance
RoHS conform | Yes |
SVHC free | Yes |