ZXMN3A01FTA | Diodes
Diodes N channel MOSFET, 30 V, 2 A, TO-236, ZXMN3A01FTA
Unit Price (€ / pc.)
0.6426 € *
Standard delivery time from the manufacturer is: 2 Weeks
Total Price:
0.64 € *
Price list
Quantity
Price per unit*
1 pcs.
0.6426 €
50 pcs.
0.6307 €
250 pcs.
0.6188 €
*incl. VAT plus shipping costs
Subject to prior sale
MOSFET, ZXMN3A01FTA, Diodes
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low On-Resistance
- Fast switching speed
- Low threshold
- Low gate drive
Technical specifications
| Filter | Property | Value |
|---|---|---|
| drain-source on resistance RDS (on) max @VGS=10V | 120 mΩ | |
| Gate Charge Qg @10V (nC) | 3.9x10<sup>-9</sup> C | |
| max. operating temperature | 150 °C | |
| Enclosure | TO-236 | |
| Assembly | SMD | |
| Max. current | 2 A | |
| min. operating temperature | -55 °C | |
| max. Voltage | 30 V | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| RoHS conform | Yes |