ZTX849 | Diodes
Bipolar junction transistor, NPN, 5 A, 30 V, THT, e-line, ZTX849
Unit Price (€ / pc.)
0.6545 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, ZTX849, DIODES
NPN silicon planar medium power high current transistor, E-Line.
Technical specifications
| Max DC amplification | 300 mA | |
| Saturation voltage | 200 mV | |
| Assembly | THT | |
| Enclosure | e-line | |
| Rated current | 5 A | |
| max.voltage between collector and base Vcbo | 80 V | |
| Version | NPN | |
| min. operating temperature | -55 °C | |
| Transit frequency fTmin | 100 MHz | |
| Min DC gain | 100 mA | |
| max. operating temperature | 200 °C | |
| max.voltage between collector and emitter Vceo | 30 V | |
| Collector current | 5 A | |
| Power dissipation | 1.2 W |
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Logistics
| Country of origin | QU |
| Customs tariff number | 85412900 |
| Original Packaging | Bulk with 4,000 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |