MMBT5551-7-F | Diodes
Bipolar junction transistor, NPN, 600 mA, 160 V, SMD, SOT-23, MMBT5551-7-F
Unit Price (€ / pc.)
0.1309 € *
Standard delivery time from the manufacturer is: 1 Week
NPN transistor, MMBT5551-7-F, DIODES
NPN high voltage transistor in SOT23 package.
Features
- Halogen and antimony free
- RoHS Compliant
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Transit frequency fTmin | 300 MHz | |
| max. operating temperature | 150 °C | |
| Saturation voltage | 200 mV | |
| Assembly | SMD | |
| max.voltage between collector and emitter Vceo | 160 V | |
| min. operating temperature | -55 °C | |
| max.voltage between collector and base Vcbo | 180 V | |
| Power dissipation | 0.3 W | |
| Enclosure | SOT-23 | |
| Collector current | 600 mA | |
| Version | NPN |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 3,000 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 6/8/11 |
| RoHS conform | Yes |
| SVHC free | Yes |