FM24C04B-GTR | Cypress

FRAM FM24C04B-GTR

Order No.: 53S4009
MPN:
FM24C04B-GTR
Series: FM24C
FM24C04B-GTR Cypress Memory ICs
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Unit Price (€ / pc.)
1.0234 € *
Available in 5 Days: 2,450 pcs. - if ordered today
Total Price:
5.12 € *
*incl. VAT plus shipping costs
Subject to prior sale
5 pcs.
1.0234 €

4-Kbit nonvolatile memory, FM24C04B-GTR, Cypress

The FM24C04B-GTR is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B-GTR performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C04B-GTR is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM

Features

  • Advanced high-reliability ferroelectric process
  • Low power consumption
  • Restriction of hazardous substances (RoHS) compliant
Technical specifications
Filter Property Value
Enclosure SOIC-8
Assembly SMD
Memory size 4 kbit
Voltage 4.5-5.5 V
Access time 550 s
Clock frequency 1 MHz
Technology FRAM
min. operating temperature -40 °C
max. operating temperature 85 °C
Logistics
Property Value
MSL MSL 3
Customs tariff number 85423290
Original Packaging Reel with 2,500 pieces
Compliance
Property Value
Date of RoHS guidelines 6/8/11
SVHC free Yes
RoHS conform Yes