BDW83D | COMSET Semiconductors
Bipolar junction transistor, NPN, 15 A, 120 V, THT, TO-3PN, BDW83D
Order No.: 15S5368
EAN: 4099879028563
MPN:
BDW83D
Unit Price (€ / pc.)
5.2241 € *
Available: 200 pcs.
Leadtime: 6 Weeks **
Total Price:
5.22 € *
Price list
Quantity
Price per unit*
1 pcs.
5.2241 €
10 pcs.
3.7366 €
100 pcs.
3.2011 €
500 pcs.
2.7727 €
1000 pcs.
2.5228 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BDW83D, COMSET
This silicon epitaxial-base NPN power monolithic Darlington transistor is mounted in Jedec TO3PN plastic package. It is intended for use in power linear and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Version | NPN | |
| Enclosure | TO-3PN | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 120 V | |
| max.voltage between collector and emitter Vceo | 120 V | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Rated current | 15 A | |
| Saturation voltage | 2.5 V | |
| Transit frequency fTmin | 1 MHz | |
| Power dissipation | 150 W | |
| Collector current | 15 A |
Download
Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 25 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
