BDW83D | COMSET Semiconductors
Bipolar junction transistor, NPN, 15 A, 120 V, THT, TO-3PN, BDW83D
Unit Price (€ / pc.)
2.5942 € *
Standard delivery time from the manufacturer is: 6 Weeks
NPN power transistor, BDW83D, COMSET
This silicon epitaxial-base NPN power monolithic Darlington transistor is mounted in Jedec TO3PN plastic package. It is intended for use in power linear and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Assembly | THT | |
| Enclosure | TO-3PN | |
| Version | NPN | |
| Saturation voltage | 2.5 V | |
| Collector current | 15 A | |
| max.voltage between collector and emitter Vceo | 120 V | |
| max.voltage between collector and base Vcbo | 120 V | |
| Power dissipation | 150 W | |
| Transit frequency fTmin | 1 MHz | |
| Rated current | 15 A | |
| min. operating temperature | -65 °C | |
| max. operating temperature | 150 °C |
Download
Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 25 pieces |
| Customs tariff number | 85412900 |
| Country of origin | CN |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |