BDV67C-T | COMSET Semiconductors
Bipolar junction transistor, NPN, 16 A, 120 V, THT, TO-3PN, BDV67C-T
Unit Price (€ / pc.)
3.6414 € *
Standard delivery time from the manufacturer is: 6 Weeks
NPN power transistor, BDV67C-T, COMSET
This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max.voltage between collector and emitter Vceo | 120 V | |
| max.voltage between collector and base Vcbo | 140 V | |
| min. operating temperature | -65 °C | |
| max. operating temperature | 150 °C | |
| Version | NPN | |
| Assembly | THT | |
| Saturation voltage | 2 V | |
| Collector current | 16 A | |
| Enclosure | TO-3PN | |
| Power dissipation | 200 W | |
| Min DC gain | 1000 mA |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Country of origin | CN |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |