BDV67B | COMSET Semiconductors
Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3P, BDV67B
Unit Price (€ / pc.)
4.2126 € *
Standard delivery time from the manufacturer is: 3 Weeks
NPN power transistor, BDV67B, COMSET
This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max.voltage between collector and emitter Vceo | 100 V | |
| max.voltage between collector and base Vcbo | 120 V | |
| min. operating temperature | -65 °C | |
| Rated current | 16 A | |
| max. operating temperature | 150 °C | |
| Version | NPN | |
| Assembly | THT | |
| Saturation voltage | 2 V | |
| Collector current | 16 A | |
| Enclosure | TO-3P | |
| Power dissipation | 200 W | |
| Min DC gain | 1000 mA |
Download
Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Country of origin | MY |
| Original Packaging | Bar with 25 pieces |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |