BD649-T | COMSET Semiconductors
Bipolar junction transistor, NPN, 8 A, 100 V, THT, TO-220, BD649-T
NCNR (non cancelable / non returnable)
Unit Price (€ / pc.)
0.5117 € *
Available: 397 pcs.
Total Price:
0.51 € *
Price list
Quantity
Price per unit*
1 pcs.
0.5117 €
25 pcs.
0.4760 €
100 pcs.
0.4522 €
*incl. VAT plus shipping costs
Subject to prior sale
NPN power transistor, BD649-T, COMSET
The BD649-T is a NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. It is intended for output stages in audio equipment, general amplifiers, and analogue switching application.
Features
- Compliance to RoHS
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Assembly | THT | |
| Enclosure | TO-220 | |
| Version | NPN | |
| Saturation voltage | 2.5 V | |
| Collector current | 8 A | |
| max.voltage between collector and emitter Vceo | 100 V | |
| max.voltage between collector and base Vcbo | 120 V | |
| Power dissipation | 62.5 W | |
| Frequency | 10 MHz | |
| Rated current | 8 A | |
| min. operating temperature | -65 °C | |
| max. operating temperature | 150 °C |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 50 pieces |
| Country of origin | CN |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |