BD137.10 | CDIL
Bipolar junction transistor, NPN, 1.5 A, 60 V, THT, TO-126, BD137.10
Unit Price (€ / pc.)
0.1273 € *
Available in 5 Days: 750 pcs. - if ordered today
NPN transistor, BD137-10, CDIL
The BD137-10 NPN epitaxial silicon power transistor is designed for use as audio amplifier and drivers utilizing.
Technical specifications
| max. operating temperature | 150 °C | |
| Enclosure | TO-126 | |
| Power dissipation | 1.25 W | |
| Transit frequency fTmin | 50 MHz | |
| Saturation voltage | 500 mV | |
| Assembly | THT | |
| max.voltage between collector and base Vcbo | 60 V | |
| max.voltage between collector and emitter Vceo | 60 V | |
| Rated current | 15 A | |
| Max DC amplification | 160 mA | |
| Min DC gain | 63 mA | |
| Version | NPN | |
| min. operating temperature | -55 °C | |
| Collector current | 1.5 A |
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Logistics
| Customs tariff number | 85412900 |
| Country of origin | IN |
Compliance
| SVHC free | Yes |
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |