SISA18ADN-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 30 V, 38.3 A, PowerPAK 1212-8, SISA18ADN-T1-GE3
Brand: Vishay
SKU: 24S8224
Availability: OutOfStock

Vishay N channel TrenchFET power MOSFET, 30 V, 38.3 A, PowerPAK 1212-8, SISA18ADN-T1-GE3

Order No.: 24S8224

EAN: 4099879033697

MPN:

SISA18ADN-T1-GE3

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 38.3 A

drain-source on resistance RDS (on) max @VGS=10V 7.5 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.357 € *

Standard delivery time from the manufacturer is: On Request

Total Price:

1,071.00 € *

*incl. VAT plus shipping costs

Subject to prior sale

Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiSA18ADN, 30 V, 7.5 mohm, 38.3 A, 6.9 nC, PowerPAK 1212-8

Technical specifications

	max. Voltage	30 V
	Assembly	SMD
	Enclosure	PowerPAK 1212-8
	Max. current	38.3 A
	Version	N channel
	min. operating temperature	-55 °C
	max. operating temperature	150 °C
	Gate Charge Qg @10V (nC)	2.15x10<sup>-8</sup> C
	drain-source on resistance RDS (on) max @VGS=10V	7.5 mΩ