SIS862DN-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 60 V, 40 A, PowerPAK 1212-8, SIS862DN-T1-GE3
Brand: Vishay
SKU: 24S8242
Availability: OutOfStock

Vishay N channel TrenchFET power MOSFET, 60 V, 40 A, PowerPAK 1212-8, SIS862DN-T1-GE3

Order No.: 24S8242

EAN: 4099879033765

MPN:

SIS862DN-T1-GE3

Series: SI

Image may differ

Key Specification:

Version N channel

max. Voltage 60 V

Max. current 40 A

drain-source on resistance RDS (on) max @VGS=10V 8.5 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.8092 € *

Available: 0 pcs.

Leadtime: On Request **

Total Price:

2,427.60 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiS862DN, 60 V, 8.5 mohm, 40 A, 8.7 nC, PowerPAK 1212-8

Technical specifications

	max. Voltage	60 V
	Power loss	52 W
	Assembly	SMD
	Enclosure	PowerPAK 1212-8
	Max. current	40 A
	Version	N channel
	min. operating temperature	-55 °C
	max. operating temperature	150 °C
	Gate Charge Qg @10V (nC)	3.2x10<sup>-8</sup> C
	drain-source on resistance RDS (on) max @VGS=10V	8.5 mΩ