SIRA18DP-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 30 V, 33 A, SOIC-8, SIRA18DP-T1-GE3
Brand: Vishay
SKU: 24S8220
Availability: OutOfStock

Vishay N channel TrenchFET power MOSFET, 30 V, 33 A, SOIC-8, SIRA18DP-T1-GE3

Order No.: 24S8220

EAN: 4099879033680

MPN:

SIRA18DP-T1-GE3

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 33 A

drain-source on resistance RDS (on) max @VGS=10V 7.5 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.4046 € *

Available: 0 pcs.

Leadtime: On Request **

Total Price:

1,213.80 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiRA18DP, 30 V, 7.5 mohm, 33 A, 6.9 nC, PowerPAK SO-8

Technical specifications

	max. Voltage	30 V
	Power loss	14.7 W
	Assembly	SMD
	Enclosure	SOIC-8
	Max. current	33 A
	Version	N channel
	min. operating temperature	-55 °C
	max. operating temperature	150 °C
	Gate Charge Qg @10V (nC)	2.15x10<sup>-8</sup> C
	drain-source on resistance RDS (on) max @VGS=10V	7.5 mΩ