SIR826ADP-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 80 V, 60 A, SOIC-8, SIR826ADP-T1-GE3
Brand: Vishay
SKU: 24S8210
Availability: InStock

Vishay N channel TrenchFET power MOSFET, 80 V, 60 A, SOIC-8, SIR826ADP-T1-GE3

Order No.: 24S8210

EAN: 4099879033666

MPN:

SIR826ADP-T1-GE3

Series: SI

Image may differ

Key Specification:

Version N channel

max. Voltage 80 V

Max. current 60 A

drain-source on resistance RDS (on) max @VGS=10V 5.5 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.0829 € *

Standard delivery time from the manufacturer is: 14 Weeks

Total Price:

3,248.70 € *

*incl. VAT plus shipping costs

Subject to prior sale

Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiR826ADP, 80 V, 5.5 mohm, 60 A, 25 nC, PowerPAK SO-8

Technical specifications

Filter	Property	Value
	Version	N channel
	max. Voltage	80 V
	Max. current	60 A
	drain-source on resistance RDS (on) max @VGS=10V	5.5 mΩ
	Enclosure	SOIC-8
	Gate Charge Qg @10V (nC)	2.5x10<sup>-8</sup> C
	Power loss	104 W
	Assembly	SMD
	min. operating temperature	-55 °C
	max. operating temperature	150 °C