SIJ438DP−T1−GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 40 V, 80 A, PowerPAK SO-8L, SIJ438DP−T1−GE3
Brand: Vishay
SKU: 54S1027
Availability: InStock

Vishay N channel TrenchFET power MOSFET, 40 V, 80 A, PowerPAK SO-8L, SIJ438DP−T1−GE3

Order No.: 54S1027

EAN: 4099879034830

MPN:

SIJ438DP−T1−GE3

Series: SIJ438

Image may differ

Key Specification:

Version N channel

max. Voltage 40 V

Max. current 80 A

drain-source on resistance RDS (on) max @VGS=4,5V 1.75 mΩ

drain-source on resistance RDS (on) max @VGS=10V 1.35 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.1543 € *

Standard delivery time from the manufacturer is: 2 Weeks

Total Price:

115.43 € *

*incl. VAT plus shipping costs

Subject to prior sale

Description

N-Channel MOSFET, SIJ438DP-T1-GE3, Vishay

Features

Tuned for the lowest RDS-Qoss FOM
100 % Rg and UIS tested
Qgd / Qgs ratio < 1 optimizes switching characteristics

Technical specifications

Filter	Property	Value
	Power loss	69.4 W
	drain-source on resistance RDS (on) max @VGS=10V	1.35 mΩ
	max. operating temperature	150 °C
	max. Voltage	40 V
	Max. current	80 A
	Gate Charge Qg @10V (nC)	0.000000121 C
	min. operating temperature	-55 °C
	Assembly	SMD
	drain-source on resistance RDS (on) max @VGS=4,5V	1.75 mΩ
	Enclosure	PowerPAK SO-8L
	Version	N channel