TK100E06N1,S1X(S | Toshiba
Toshiba N channel MOSFET, 60 V, 100 A, TO-220, TK100E06N1,S1X(S
Unit Price (€ / pc.)
1.8445 € *
Standard delivery time from the manufacturer is: On Request
MOSFET, TK100E06N1,S1X(S, Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Features
- Low drain-source on-resistance
- Low leakage current
Applications
- Switching voltage regulators
Technical specifications
| max. Voltage | 60 V | |
| Power loss | 255 W | |
| Assembly | THT | |
| Enclosure | TO-220 | |
| Max. current | 100 A | |
| Version | N channel | |
| min. operating temperature | -55 °C | |
| max. operating temperature | 150 °C | |
| Gate Charge Qg @10V (nC) | 1.4x10<sup>-7</sup> C | |
| drain-source on resistance RDS (on) max @VGS=10V | 2.3 mΩ |
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Logistics
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
| Original Packaging | Bulk with 50 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |