Half bridge gate driver, TPS28225DR, Texas Instruments
The TPS28225DR is a high-speed driver designed for N-channel, complementary-driven power MOSFETs, featuring adaptive dead-time control. Optimized for use in a variety of high-current single- and multi-phase DC-to-DC converters, the TPS28225DR delivers a compact, efficient solution with low EMI emissions. High efficiency is achieved through several key features: up to 8.8 V gate drive voltage, fast 14 ns adaptive dead-time control, 14 ns propagation delay, and strong drive capability with 2 A source and 4 A sink currents. The low 0.4 Ω impedance of the lower gate driver ensures the MOSFET gate stays below its threshold voltage, preventing shoot-through current during high dV/dt transitions at the phase node. An internal diode enables bootstrap capacitor charging, allowing the TPS28225DR to efficiently drive N-channel MOSFETs in a half-bridge configuration.
Features
- 3-State PWM Input for Power Stage Shutdown
- Thermal Shutdown
- UVLO Protection
- Internal Bootstrap Diode
