STP3N150 | STMicroelectronics
STMicroelectronics N channel PowerMESH MOSFET, 1500 V, 2.5 A, TO-220, STP3N150
Unit Price (€ / pc.)
3.0702 € *
Available: 2,849 pcs.
Power MOSFET, STP3N150, STMicroelectronics
The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company's consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Features
- 100% Avalanche tested
- High speed switching
- Creepage distance path is 5.4 mm
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power loss | 63 W | |
| Max. current | 2.5 A | |
| drain-source on resistance RDS (on) max @VGS=10V | 9 Ω | |
| max. operating temperature | 150 °C | |
| max. Voltage | 1500 V | |
| Gate Charge Qg @10V (nC) | 1x10<sup>-8</sup> C | |
| Assembly | THT | |
| min. operating temperature | -55 °C | |
| Enclosure | TO-220 | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Bar with 50 pieces |
| MSL | MSL 1 |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |