STP20NM60 | STMicroelectronics
STMicroelectronics N channel MDmesh power MOSFET, 600 V, 20 A, TO-220, STP20NM60
Order No.: 30S0999
EAN: 4099879033888
MPN:
STP20NM60
Unit Price (€ / pc.)
5.117 € *
Standard delivery time from the manufacturer is: 1 Week
MOSFET, STP20NM60, STMicroelectronics
The STP20NM60 is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Enclosure | TO-220 | |
| Gate Charge Qg @10V (nC) | 1x10<sup>-8</sup> C | |
| Max. current | 20 A | |
| max. Voltage | 600 V | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -65 °C | |
| Version | N channel | |
| Assembly | THT | |
| drain-source on resistance RDS (on) max @VGS=10V | 290 mΩ |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 50 pieces |
| MSL | MSL 1 |
| Country of origin | CN |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |