FMY1AT148 | Rohm Semiconductor
Bipolar junction transistor, NPN/PNP, -150 mA, -50 V, SMD, SOT-25, FMY1AT148
Unit Price (€ / pc.)
0.6783 € *
Standard delivery time from the manufacturer is: 2 Weeks
Amplification Transistor, FMY1AT148, Rohm Semiconductor
Device integrating two transistor in ultra-compact package, suitable for various application such as pre-amplifier differential amplification circuit, high-frequency oscillator, driver IC and so forth.
Features
- Ultra-compact complex bipolar transistor
- General Purpose
- Small Surface Mount Package
- Pb Free/RoHS Compliant
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power dissipation | 300 mW | |
| Assembly | SMD | |
| max.voltage between collector and base Vcbo | -60 V | |
| Transit frequency fTmin | 180 MHz | |
| Max DC amplification | 560 mA | |
| max. operating temperature | 150 °C | |
| Version | NPN/PNP | |
| Enclosure | SOT-25 | |
| Collector current | -150 mA | |
| Min DC gain | 120 mA | |
| min. operating temperature | -55 °C | |
| max.voltage between collector and emitter Vceo | -50 V |
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Logistics
| Property | Value |
|---|---|
| Country of origin | PH |
| Original Packaging | Reel with 3,000 pieces |
| Customs tariff number | 85419000 |
| MSL | MSL 1 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 6/8/11 |
| RoHS conform | No |