FDS8880 | onsemi
Onsemi N channel power trench MOSFET, 30 V, 11.6 A, SOIC-8, FDS8880
Unit Price (€ / pc.)
0.8568 € *
Standard delivery time from the manufacturer is: 2 Weeks
Power trench , FDS8880, onsemi
The FDS8880 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
- Low gate charge
- High power and current handling capability
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Enclosure | SOIC-8 | |
| Gate Charge Qg @10V (nC) | 2.3x10<sup>-8</sup> C | |
| Version | N channel | |
| max. operating temperature | 150 °C | |
| Assembly | SMD | |
| max. Voltage | 30 V | |
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 10 mΩ | |
| Max. current | 11.6 A |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Reel with 2,500 pieces |
| Customs tariff number | 85412900 |
| Country of origin | PH |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |