FDMS004N08C | onsemi
Onsemi N channel shielded gate trench MOSFET, 80 V, 126 A, SO-8-FL/Power56, FDMS004N08C
Unit Price (€ / pc.)
1.8445 € *
Standard delivery time from the manufacturer is: 26 Weeks
N-Channel MOSFET, FDMS004N08C, ON Semiconductor
Features
- Shielded Gate MOSFET Technology
- MAX RDSon = 4.0 mOhm @ VGS=10V, ID=44A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lower Switching Noise/EMI
- MSL 1 Robust Package Design
- 100% UIL tested
- RoHS Complient
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power loss | 125 W | |
| drain-source on resistance RDS (on) max @VGS=10V | 4 mΩ | |
| max. operating temperature | 150 °C | |
| max. Voltage | 80 V | |
| Max. current | 126 A | |
| Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Enclosure | SO-8-FL/Power56 | |
| Version | N channel |
Download
Logistics
| Property | Value |
|---|---|
| Country of origin | PH |
| Original Packaging | Reel with 3,000 pieces |
| Customs tariff number | 85412900 |
| MSL | MSL 3 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| RoHS conform | Yes |