FDB0190N807L | onsemi
Onsemi N channel power trench MOSFET, 80 V, 270 A, D2PAK-7L, FDB0190N807L
Unit Price (€ / pc.)
3.4510 € *
Standard delivery time from the manufacturer is: 8 Weeks
N-Channel MOSFET, FDB0190N807L, ON Semiconductor
Features
- Max RDSon = 1,7 mOhm @ VHGS= 10V, ID= 34A
- Fast Switching; Low Gate Charge,
- High Power and Current Handling Capability
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 80 V | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| max. operating temperature | 175 °C | |
| Max. current | 270 A | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 1.78x10<sup>-7</sup> C | |
| Power loss | 250 W | |
| Enclosure | D2PAK-7L | |
| drain-source on resistance RDS (on) max @VGS=10V | 1.7 mΩ |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 800 pieces |
| Country of origin | CN |
| MSL | MSL 3 |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |