EEPROM memory, N01S830BAT22IT, onsemi
The onsemi serial SRAM device includes an integrated memory device including this 1 Mb serially accessed Static Random Access Memory, internally organized as 128 K words by 8 bits. The device is designed and fabricated using onsemi’s advanced CMOS technology to provide both high-speed performance and low power. The device operates with a single chip select (CS) input and uses a simple Serial Peripheral Interface (SPI) protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within the device. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used and in QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory.
Features
- Flexible Operating Modes
- High Frequency Read and Write Operation
- Built-in Write Protection
- High Reliability
