TIP2955G | onsemi
Bipolar junction transistor, PNP, 1.5 A, 60 V, THT, TO-247, TIP2955G
Unit Price (€ / pc.)
1.5232 € *
Available: 0 pcs.
Leadtime: On Request **
Power transistor, TIP2955G, onsemi
This complementary silicon transistor is designed as general-purpose switching and for amplifier applications.
Technical specifications
| Max DC amplification | 70 mA | |
| Saturation voltage | 3 V | |
| Assembly | THT | |
| Enclosure | TO-247 | |
| max.voltage between collector and base Vcbo | 100 V | |
| Version | PNP | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 2.5 MHz | |
| Min DC gain | 5 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 60 V | |
| Collector current | 1.5 A | |
| Power dissipation | 90 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 30 pieces |
Compliance
| SVHC free | Yes |
| RoHS conform | Yes |