SSVBC846BPDW1T1G | onsemi
Bipolar junction transistor, NPN/PNP, 100 mA, 65 V, SMD, SOT-363, SSVBC846BPDW1T1G
Order No.: 79S7975
MPN:
SSVBC846BPDW1T1G
Unit Price (€ / pc.)
0.2559 € *
Standard delivery time from the manufacturer is: 2 Weeks
These transistors are designed for general purpose amplifier applications.
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Min DC gain | 200 | |
| Enclosure | SOT-363 | |
| Collector current | 100 mA | |
| Power dissipation | 380 mW | |
| max. operating temperature | 150 °C | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| Version | NPN/PNP | |
| max.voltage between collector and emitter Vceo | 65 V | |
| max.voltage between collector and base Vcbo | 80 V | |
| Max DC amplification | 475 |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |