NJW21193G | onsemi
Bipolar junction transistor, PNP, 16 A, 250 V, THT, TO-3P, NJW21193G
Unit Price (€ / pc.)
3.0702 € *
Standard delivery time from the manufacturer is: On Request
PNP power transistor, NJW21193G, onsemi
This silicon power transistor is specifically designed for high power audio output, disk head positioners and linear applications.
Features
- High DC current gain
- Excellent gain linearity
- Exceptional safe operating area
Technical specifications
| Max DC amplification | 80 mA | |
| Saturation voltage | 1.4 V | |
| Assembly | THT | |
| Enclosure | TO-3P | |
| max.voltage between collector and base Vcbo | 400 V | |
| Version | PNP | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 4 MHz | |
| Min DC gain | 20 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 250 V | |
| Collector current | 16 A | |
| Power dissipation | 200 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85419000 |
| Original Packaging | Bar with 30 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |