MJE13007G | onsemi
Bipolar junction transistor, NPN, 8 A, 400 V, THT, TO-220, MJE13007G
Abgekündigt
Unit Price (€ / pc.)
1.2257 € *
Available: 37 pcs.
Leadtime: On Request **
Total Price:
1.23 € *
Price list
Quantity
Price per unit*
1 pcs.
1.2257 €
100 pcs.
1.0948 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, MJE13007G, onsemi
The MJE13007G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
Technical specifications
| Version | NPN | |
| Enclosure | TO-220 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 400 V | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Power dissipation | 80 W | |
| Collector current | 8 A | |
| Max DC amplification | 40 mA | |
| Min DC gain | 8 mA |
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Logistics
| Country of origin | IN |
| Customs tariff number | 85419000 |
| Original Packaging | Stange mit 50 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |