MJD45H11T4G | onsemi
Bipolar junction transistor, PNP, 8 A, 80 V, SMD, TO-252, MJD45H11T4G
Unit Price (€ / pc.)
0.3689 € *
Standard delivery time from the manufacturer is: On Request
Transistor, MJD45H11T4G, ON Semiconductor
The MJD45H11T4G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.
Features
- Electrically similar to popular D44H/D45H series
- Fast switching speeds
- Complementary pairs simplifies designs
- AEC-Q101 qualified and PPAP capable
Technical specifications
| Saturation voltage | 1 V | |
| Assembly | SMD | |
| Enclosure | TO-252 | |
| Rated current | 8 A | |
| max.voltage between collector and base Vcbo | 80 V | |
| Version | PNP | |
| min. operating temperature | -55 °C | |
| Transit frequency fTmin | 90 MHz | |
| Min DC gain | 40 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 80 V | |
| Collector current | 8 A | |
| Power dissipation | 20 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 2,500 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |