MJ11016G | onsemi
Bipolar junction transistor, NPN, 30 A, 120 V, THT, TO-3, MJ11016G
Unit Price (€ / pc.)
8.6513 € *
Standard delivery time from the manufacturer is: On Request
Total Price:
8.65 € *
Price list
Quantity
Price per unit*
1 pcs.
8.6513 €
10 pcs.
8.1753 €
100 pcs.
7.6874 €
200 pcs.
7.2114 €
400 pcs.
6.7354 €
*incl. VAT plus shipping costs
Subject to prior sale
High current transistor, MJ11016G, onsemi
This high-current complementary silicon transistor is designed for use as output devices in complementary general purpose amplifier applications.
Features
- High DC current gain
- Monolithic construction with built-in base emitter shunt resistor
Technical specifications
| Saturation voltage | 3 V | |
| Min DC gain | 200 mA | |
| Enclosure | TO-3 | |
| max. operating temperature | 200 °C | |
| max.voltage between collector and emitter Vceo | 120 V | |
| Power dissipation | 200 W | |
| max.voltage between collector and base Vcbo | 120 V | |
| Assembly | THT | |
| min. operating temperature | -55 °C | |
| Rated current | 30 A | |
| Collector current | 30 A | |
| Transit frequency fTmin | 4 MHz | |
| Version | NPN |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Tray with 100 pieces |
| Country of origin | US |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |