BUL45D2G | onsemi
Bipolar junction transistor, NPN, 5 A, 400 V, THT, TO-220, BUL45D2G
Order No.: 77S4130
MPN:
BUL45D2G
Unit Price (€ / pc.)
3.213 € *
Standard delivery time from the manufacturer is: 2 Weeks
The BUL45D2G is state−of−art High Speed High gain Bipolartransistor.
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Min DC gain | 22 | |
| Enclosure | TO-220 | |
| Collector current | 5 A | |
| Power dissipation | 75 W | |
| max. operating temperature | 150 °C | |
| Assembly | THT | |
| min. operating temperature | -65 °C | |
| Version | NPN | |
| max.voltage between collector and emitter Vceo | 400 V | |
| max.voltage between collector and base Vcbo | 700 V | |
| Max DC amplification | 34 |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |