BD139G | onsemi
Bipolar junction transistor, NPN, 1.5 A, 80 V, THT, TO-225AA, BD139G
Unit Price (€ / pc.)
0.4165 € *
Available: 0 pcs.
Leadtime: On Request **
Transistor, BD139G, ON Semiconductor
The BD139G is an NPN Plastic Medium-Power Silicon Transistor designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features
- High DC Current Gain
- BD 135, 137, 139 are complementary with BD 136, 138, 140
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
Technical specifications
| Version | NPN | |
| Enclosure | TO-225AA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 80 V | |
| max.voltage between collector and emitter Vceo | 80 V | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Saturation voltage | 500 mV | |
| Transit frequency fTmin | 50 MHz | |
| Power dissipation | 12.5 W | |
| Collector current | 1.5 A | |
| Max DC amplification | 250 mA | |
| Min DC gain | 40 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bulk mit 500 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |