BCP53-10T1G | onsemi
Bipolar junction transistor, PNP, 1.5 A, -80 V, SMD, SOT-223, BCP53-10T1G
Unit Price (€ / pc.)
0.2356 € *
Available in 5 Days: 100 pcs. - if ordered today
PNP Silicon Epitaxial Transistor, BCP53-10T1G, onsemi
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Transit frequency fTmin | 50 MHz | |
| Min DC gain | 63 mA | |
| Enclosure | SOT-223 | |
| Collector current | 1.5 A | |
| Power dissipation | 1.5 W | |
| max. operating temperature | 150 °C | |
| Assembly | SMD | |
| min. operating temperature | -65 °C | |
| Version | PNP | |
| max.voltage between collector and emitter Vceo | -80 V | |
| max.voltage between collector and base Vcbo | -100 V | |
| Max DC amplification | 160 mA |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |