2N7002HR | NEXPERIA
MOSFET 2N7002HR
Order No.: 30S1000
MPN:
2N7002HR
Unit Price (€ / pc.)
0.0466 € *
Standard delivery time from the manufacturer is: 1 Week
N-channel Trench MOSFET, 2N7002HR, NEXPERIA
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Version | N channel, AEC-Q101 qualified | |
| max. Voltage | 60 V | |
| Max. current | 360 mA | |
| drain-source on resistance RDS (on) max @VGS=10V | 1600 mΩ | |
| Enclosure | SOT-23 | |
| Power loss | 420 mW | |
| Assembly | SMD | |
| min. operating temperature | -65 °C | |
| max. operating temperature | 150 °C |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Country of origin | CN |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |