MMIX1T550N055T2 | Littelfuse
Littelfuse N channel GigaMOS trenchT2 HiperFETT power MOSFET, 55 V, 550 A, SMPD, MMIX1T550N055T2
Order No.: 74P1136
EAN: 4099891780012
MPN:
MMIX1T550N055T2
Unit Price (€ / pc.)
43.8634 € *
Standard delivery time from the manufacturer is: 25 Weeks
MOSFET, MMIX1T550N055T2, LITTELFUSE
A power MOSFET with N-Channel enhancement mode, avalanche rating, and advantages such as high power density, easy mounting and space savings.
Features
- Silicon chip on direct-copper-bond substrate
- Isolated substrate
- Excellent thermal transfer
- Increased temperature and power cycling capability
- Fast intrinsic diode
- Very low RDS(on)
Applications
- DC-DC converters and off-line UPS
- Primary - side switch
- High speed power switching applications
Technical specifications
| max. Voltage | 55 V | |
| Power loss | 830 W | |
| Assembly | SMD | |
| Enclosure | SMPD | |
| Max. current | 550 A | |
| Version | N channel | |
| min. operating temperature | -55 °C | |
| max. operating temperature | 175 °C | |
| Gate Charge Qg @10V (nC) | 5.95x10<sup>-7</sup> C | |
| drain-source on resistance RDS (on) max @VGS=10V | 1.3 mΩ |
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Logistics
| Country of origin | PH |
| Customs tariff number | 85411000 |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |