IXFN80N50P | Littelfuse
Littelfuse N channel HiPerFET power MOSFET, 500 V, 66 A, SOT-227, IXFN80N50P
Unit Price (€ / pc.)
33.3319 € *
Standard delivery time from the manufacturer is: 44 Weeks
MOSFET, IXFN80N50P, LITTELFUSE
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and space saving.
Features
- International standard package
- Fast intrinsic diode
- Unclamped inductive switching (UIS) rated
- UL recognized
- Isolated mounting base
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Enclosure | SOT-227 | |
| Gate Charge Qg @10V (nC) | 1.95x10<sup>-7</sup> C | |
| Version | N channel | |
| Power loss | 700 W | |
| max. operating temperature | 150 °C | |
| Assembly | screw mounting | |
| max. Voltage | 500 V | |
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 65 mΩ | |
| Max. current | 66 A |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Country of origin | KR |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |