IXFA3N120 | Littelfuse
Littelfuse N channel HiPerFET power MOSFET, 1200 V, 3 A, TO-263, IXFA3N120
Unit Price (€ / pc.)
7.6041 € *
Standard delivery time from the manufacturer is: 61 Weeks
MOSFET, IXFA3N120, Littelfuse
IXFA3N120 offers both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode.
Features
- High current handling capability
- Avalanche rated
- Low package inductance
- Fast intrinsic diode
- Easy to mount
- Space saving
- High power density
Applications
- DC-DC converters
- Battery chargers
- DC choppers
- AC motor drives
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Enclosure | TO-263 | |
| drain-source on resistance RDS (on) max @VGS=10V | 4.5 Ω | |
| max. Voltage | 1200 V | |
| Power loss | 200 W | |
| Gate Charge Qg @10V (nC) | 3.9x10<sup>-8</sup> C | |
| Assembly | SMD | |
| Max. current | 3 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85411000 |
| Country of origin | KR |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |