IS66WVQ16M4FALL-200BLI | Integrated Silicon Solution INC
PSRAM, 64 Mbit, LBGA-24, Integrated Silicon Solution INC IS66WVQ16M4FALL-200BLI
NCNR (non cancelable / non returnable)
PSRAM Memory, IS66WVQ16M4FALL-200BLI, Integrated Silicon Solution INC
The IS66WVQ16M4FALL-200BLI is an integrated memory device containing 64Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 16M words by 4 bits. The device supports a Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash. The device supports Very Low Signal Count (7 signal pins; SCLK, CS#, DQSM, and 4 SIOs), Hidden Refresh Operation, and Automotive temperature (A2, -40°C to +105°C) operation. Due to DDR operation, the minimum transferred data size is a byte (8 bits) through 4 SIO pins.
Features
- Source Synchronous Output signal during Read Operation (DQSM)
- Data Mask during Write Operation
- Configurable Latency for Read/Write
- Supports Variable Latency mode and Fixed Latency mode
- Supports Wrapped Burst mode and Continuous Burst mode
| Filter | Property | Value |
|---|---|---|
| Enclosure | LBGA-24 | |
| Assembly | SMD | |
| Memory size | 64 Mbit | |
| Voltage | 1.7-1.95 V | |
| Access time | 5 s | |
| Clock frequency | 200 MHz | |
| Technology | SRAM | |
| min. operating temperature | -40 °C | |
| max. operating temperature | 85 °C |
| Property | Value |
|---|---|
| Customs tariff number | 85423261 |
| MSL | MSL 3 |
| Country of origin | TW |
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |