PSRAM Memory, IS66WVO8M8DBLL-166BLI, Integrated Silicon Solution INC
The IS66WVO8M8DBLL-166BLI is an integrated memory device containing 64Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports an Octal Peripheral Interface (Address, Command, and Data through 8 SIO pins), Very Low Signal Count (11 signal pins; SCLK, CS#, DQSM, and 8 SIOs), Hidden Refresh Operation, and Automotive temperature (A3, -40°C to +125°C) operation. Due to DTR operation, the minimum transferred data size is word (16 bits) base instead of byte (8 bits) base.
Features
- Source Synchronous Output signal during Read Operation (DQSM)
- Data Mask during Write Operation
- Configurable Latency for Read/Write
- Supports Variable Latency mode and Fixed Latency mode
- Configurable Drive Strength
- Supports Wrapped Burst mode and Continuous Burst mode
- Supports Deep Power Down mode