PSRAM Memory, IS66WVO32M8DALL-200BLI, Integrated Silicon Solution INC
The IS66WVO32M8DALL-200BLI is an integrated memory device containing 256 Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 32M words by 8 bits. The device supports an Octal Peripheral Interface (address, command, and data through 8 SIO pins), Very Low Signal Count (11 signal pins: SCLK, CS#, DQSM, and 8 SIOs), Hidden Refresh Operation, and Automotive temperature (A2, -40°C to +105°C) operation. Due to DTR operation, the minimum transferred data size is word (16 bits) based instead of byte (8 bits) based.
Features
- Source Synchronous Output signal during Read Operation (DQSM)
- Data Mask during Write Operation
- Configurable Latency for Read/Write
- Supports Variable Latency mode and Fixed Latency mode
- Configurable Drive Strength
- Supports Wrapped Burst mode and Continuous Burst mode
- Supports Deep Power Down mode