IS66WVC4M16ECLL-7010BLI | Integrated Silicon Solution INC
PSRAM, 64 Mbit, VFBGA-54, Integrated Silicon Solution INC IS66WVC4M16ECLL-7010BLI
Order No.: 54S0698
MPN:
IS66WVC4M16ECLL-7010BLI
Unit Price (€ / pc.)
6.8362 € *
Standard delivery time from the manufacturer is: 1 Week
CellularRAM, IS66WVC4M16ECLL-7010BLI, Integrated Silicon Solution INC
The IS66WVC4M16ECLL-7010BLI is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
- Mixed Mode supports asynchronous write and synchronous read operation
- Low Power Consumption
- Reduced Array Refresh
- Temperature Controlled Refresh
- Deep power-down (DPD) mode
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Enclosure | VFBGA-54 | |
| Assembly | SMD | |
| Memory size | 64 Mbit | |
| Voltage | 1.7-1.95 V | |
| Access time | 70 s | |
| Technology | SRAM | |
| min. operating temperature | -40 °C | |
| max. operating temperature | 85 °C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | TW |
| MSL | MSL 3 |
| Customs tariff number | 85423261 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |